The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jul. 21, 2000
Applicant:
Inventors:
Bruno Gad Sfez, Jerusalem, IL;
Zvi Kotler, Tel-Aviv, IL;
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 ;
U.S. Cl.
CPC ...
G03C 5/00 ;
Abstract
Method of making a three-dimensional photonic band-gap crystal, in which a three-dimensional structure is built by successively forming a plurality of superimposed layers of photosensitive chalcogenide and creating a predetermined grating on each of them. A layer of photoresist is superimposed on each chalcogenide layer. The chalcogenide glasses are chosen among those that are photosensitive, have a high refractive index, a high ratio of high etching speed to low etching speed of at least 10. The refractive index of the glasses may be higher than 2.5. The ratio of high etching speed to low etching speed of the glasses may be at least 10.