The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Apr. 02, 2001
Satoru Tamada, Tokyo, JP;
Hidenori Mitani, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A non-volatile semiconductor memory device includes, a plurality of word lines, a plurality of bit lines, a plurality of memory circuits, and a reading circuit. A plurality of bits are memorized at each memory cell. The plurality of bit lines lie at right angle to the word lines. The reading circuit is configured to read certain data from every (n−1)th (n is an integer that is greater than two) memory cell of a memory cell array that is connecting to at least a word line. The memory cell exists on the point of intersection with the word line and the bit line. Then data reading and data writing are made by applying the voltage on the word line and the bit line. The non-volatile semiconductor memory device is electrically rewritable.