The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Sep. 07, 2001
Pieder Joerg, Domat/Ems, CH;
ABB Research Ltd, Zurich, CH;
Abstract
In a parallel circuit ( ) comprising a plurality of high-power IGBTs (T , . . . ,T ) which are each driven by a dedicated gate drive circuit (GD . . . ,GD ), each of the gate drive circuits (GD . . . ,GD ) having, at its output, a p-channel MOSFET (M M M ) and an n-channel MOSFET (M M M ) in a push-pull arrangement and the outputs of the gate drive circuits (GD . . . ,GD ) being connected to the gates of the IGBTs (T . . . ,T ) in each case via a gate resistor (R . . . ,R ), a parallel circuit comprising more than two gate drive circuits is made possible by virtue of the fact that the outputs of the gate drive circuits (GD . . . ,GD ) are interconnected via a connecting line ( ), and that the MOSFETs (M . . . ,M ) of the gate drive circuits (GD . . . ,GD ) are in each case connected to a positive or negative supply terminal (P . . . ,P or N , . . . ,N ) via a constant-current source (CS . . . ,CS ).