The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Mar. 06, 2002
Hirokazu Kawagoshi, Shiga, JP;
Hiroyuki Kitajima, Shiga, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor integrated circuit device with a high switching speed of an internal power source voltage supplied via an operational amplifier, when said internal power source voltage is output from a switching circuit, is provided. As input signal Vin goes from “L” level to “H” level, MOSFET in switching circuit turns on. At this point, upon the rising edge of input signal Vin to the “H” level, a one shot pulse is supplied to the gate of MOSFET from one-shot-pulse generating circuit , and MOSFET turns on. As MOSFET turns on, electric potential at the gate of MOSFET , which is included in operational amplifier , becomes “L” level, MOSFET turns on completely flowing electric current quickly from external power source voltage V to a capacitive load via MOSFET and MOSFET , and output voltage Vout of switching circuit climb up with a steeply-rising waveform.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile