The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Sep. 01, 2000
Vidya S. Kaushik, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of forming a capacitor and transistor are disclosed. Initially, a substrate having a semiconductor material on a first surface is provided. A layer of strontium nitride is then deposited over the first surface and a gate electrode formed over the strontium nitride. Source and drains are then formed in the first surface disposed laterally adjacent to the gate electrode to leave a channel under the gate electrode. A dielectric layer may be formed over the layer of strontium nitride prior to forming the gate electrode. The dielectric layer may include strontium, titanium, and oxygen. In one embodiment, the dielectric layer and the layer of strontium nitride are epitaxial layers. In another embodiment the layer of strontium nitride is formed by sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD). The dielectric layer may include strontium, oxygen, and nitrogen, such as strontium oxynitride formed by sputtering, CVD, or ALD.