The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jul. 03, 2000
Applicant:
Inventors:
Tomoyoshi Kushida, Seto, JP;
Katsuhiko Nishiwaki, Toyota, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/974 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/974 ;
Abstract
In a semiconductor device having high voltage resistance and low ON voltage characteristics, charge-storage regions (insulation layer) are formed in a drift region. Formed above the drift region are a channel region, an emitter region, trench-type gate electrodes, and an emitter electrode. Strips of the insulation layer extend in a direction intersecting a direction of extension of the gate electrodes, and form a stripe pattern. The insulation layer curbs extraction of holes into the channel region. Openings in the stripe pattern of the insulation layer form depletion layers.