The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Dec. 15, 1997
Yukio Nishida, Hyogo, JP;
Satoshi Shimizu, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An n-type impurity layer is formed on a boundary portion between a source/drain and a field oxide film in a portion deeper than the source/drain. Even if a metal silicide layer such as a Co silicide layer extends into a portion under the field oxide film or an end portion of the field oxide film is eroded, therefore, the metal silicide layer is not directly connected to a well, a channel cut injection layer or a channel injection layer and the distance between a pn junction formed by the source/drain and the well and an end portion of the metal silicide layer is not reduced, whereby reliability of an element operation is improved such that a leakage current is suppressed while maintaining the depth of the source/drain. Thus obtained are a semiconductor device and a method of fabricating the same which can attain a high-speed operation without increasing the depth of the source/drain while maintaining a sufficient contact width and can reduce a junction leakage current with no deterioration of the element characteristics following refinement.