The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Mar. 20, 2000
Hongzong Chew, Orlando, FL (US);
Yih-Feng Chyan, Orlando, FL (US);
John M. Hergenrother, Shorthills, NJ (US);
Yi Ma, Orlando, FL (US);
Donald P. Monroe, Summit, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
The present invention provides a VRG structure formed on a semiconductor wafer substrate. The VRG structure has a first source/drain region located in a semiconductor wafer substrate, and a conductive layer located adjacent the source/drain region, a second source/drain region and a conductive channel that extends from the first source/drain region to the second source/drain region. The conductive layer provides an electrical connection to the first source/drain region. The conductive layer may have a low sheet resistance that may be less than about 50 &OHgr;/square or less than about 20 &OHgr;/square, to the first source/drain region.