The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Nov. 16, 2000
In Sik Kim, Kyonggi-do, KR;
LG Electronics Inc., Seoul, KR;
Abstract
Infrared ray sensor and method for fabricating the same, the method including the steps of (a) forming a diaphragm on a substrate, (b) forming and patterning a semiconductor film on the diaphragm to form a first thermoelectric material film, and forming and patterning a conductor film on the diaphragm, to form a metal resistance layer in a region of the first thermoelectric material film and a second thermoelectric material film in a region of the diaphragm, (c) forming a protection film on an entire surface inclusive of the metal resistance layer, (d) forming a black body on the protection film, and (e) removing a back side portion of the substrate, to expose the diaphragm, whereby maintaining a high sensitivity, requiring no additional process, reducing Jhonson noise, and improving yield.