The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Aug. 28, 2000
Applicant:
Inventors:
Gaylen R. Hinton, Idaho Falls, ID (US);
David Summers, Salt Lake City, UT (US);
Assignee:
H & K Labs, Provo, UT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01J 1/46 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01J 1/46 ;
Abstract
Field emission transistors where either N type or P type devices are made with an insulated gate isolated from both the emitter and the collector. Such devices have input voltage levels that match the output levels, and as such are fully cascadable and integrable. Emitter and collector functions are combined in combinations to make complimentary pairs, NAND gates and NOR gates.