The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2003

Filed:

Feb. 22, 2001
Applicant:
Inventors:

Jun Bo Yoon, Taejon, KR;

Chul Hi Han, Taejon, KR;

Eui Sik Yoon, Taejon, KR;

Choong Ki Kim, Taejon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A method for manufacturing a semiconductor device where a passive element, such as, an inductor, is floating over a substrate, where an integrated circuit is formed, such that the overall area of the semiconductor device may be highly reduced. According to the present invention, a first metal layer is formed on the substrate, a first masking layer is formed on a portion of the first metal layer, a second metal layer is formed on other portion of the first metal layer on which the first masking layer is not formed, and a second masking layer is formed on the first masking layer and the second metal layer. Then, the first masking layer and a portion of the second masking layer which includes a portion which covers the first masking layer is removed, a third metal layer is formed on portions of the first and second metal layers which are exposed by the step of removing the first masking layer and the portion of the second masking layer. Finally, the second masking layer, the second metal layer; and the first metal layer except a portion which the third metal layer covers are removed. In this way, the area for integrating various passive elements can be saved and the overall area for the semiconductor device including the integrated circuit and the passive elements may be reduced.


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