The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Oct. 19, 2000
Atsuo Tsunoda, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An object of the present invention is provide an InGaAlP-based semiconductor layer of a good crystal quality at a higher temperature up to a re-evaporating temperature by MBE process. A buffer layer made of GaAs and a buffer layer made of GaInP are formed by MBE (molecular beam epitaxy) process on a GaAs substrate having a facet, which is to be a main facet, inclined by &thgr; in [011] direction from (100) facet. Then semiconductor layers are formed by MBE process so as to include cladding layers having a bandgap E and an AlGaInP active layer having a bandgap E which is adjusted by an amount of III-group element to be represented by E <E . The semiconductor laser device has a ridge stripe extending in [01-1] direction.