The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Mar. 23, 2001
Alain Inard, St. Nazaire les Eymes, FR;
Dominique Cecile Zulian, Saint Martin d'Heres, FR;
Didier Levy, St. Nazaire les Eymes, FR;
Meindert Martin Lunenborg, Crolles, FR;
Walter Jan August De Coster, St. Nazaire les Eymes, FR;
Jean Claude Oberlin, Le Touvet, FR;
U.S. Philips Corporation, Eindhoven, NL;
Abstract
The invention relates to a method of forming an insulating zone ( ) around an active zone ( ) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone ( ) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone ( ) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.