The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Aug. 17, 2001
Robert C. Sbert, Rochester, NY (US);
Xerox Corporation, Stamford, CT (US);
Abstract
Development electrode wires for use in a Scavengless or Hybrid Scavengless Development system are treated using Ion Implantation so as to minimize the creation of charge potential between the electrode wires and developer material during frictional contact therebetween. Treatment of the wires using Ion Implantation for minimizing the creation of a charge potential is effected without diminishing the hardness of the wire material. In fact, wire hardness and resistance to wire contamination are enhanced using Ion Implantation in fabricating the wires. A bare wire used for the electrode is first plated with a Gold/Platinum alloy. The ions become implanted in the substrate without altering the surface finish of the wire electrodes yet alter the tribo-charging properties or Electronegativity of the wire. The result of Ion Implantation is to tune or match the Electronegativity of the electrode wire with the Electronegativity of the toner material used in the development system.