The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Nov. 20, 2000
Toshiaki Fukunaga, Kaisei-machi, JP;
Mitsugu Wada, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Abstract
In a semiconductor laser device: a lower cladding layer; a lower optical waveguide layer; a compressive strain quantum well active layer made of In Ga As P , where 0<x3≦0.4, 0≦y3≦0.1; an upper optical waveguide layer; a first upper cladding layer made of In Ga P of a second conductive type, and formed on the upper optical waveguide layer; an etching stop layer made of In Ga As P of the second conductive type, where 0≦x1≦0.3, 0≦y1≦0.3; a current confinement layer made of In Ga P of the first conductive type, where x8=0.49±0.01; a second upper cladding layer made of Al Ga As of the second conductive type, where 0.20≦z4≦0.50; and a contact layer of the second conductive type are formed on a GaAs substrate of a first conductive type in this order. In the semiconductor laser device, the absolute value of the product of the strain and the thickness of the compressive strain quantum well active layer is equal to or smaller than 0.25 nm; the absolute value of a second product of the strain and the thickness of the etching stop layer is equal to or smaller than 0.25 nm; and each of the lower cladding layer, the lower optical waveguide layer, the upper optical waveguide layer, the first upper cladding layer, the current confinement layer, the second upper cladding layer, and the contact layer has such a composition as to lattice-match with the GaAs substrate.