The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2003

Filed:

Oct. 23, 2001
Applicant:
Inventors:

Sang Pil Lee, Kyoungki-do, KR;

Jong Tai Park, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

Semiconductor memory device comprising a command buffer unit for inputting rasb, casb and web of TTL level and buffering to CMOS level, a unit for buffering bank address signal of TTL level to CMOS level, a cas enable bank signal generating unit indicating the enabled bank wherein the CAS is being performed, a precharge interrupt signal generating unit for combining output signals of the command buffer unit to detect precharge command and for comparing output signal of the bank address buffer unit and the inputted enable bank signal and if enabled bank corresponds to the selected bank, generating and latching precharge interrupt signals to master clock and outputting same, and a unit for generating strobe signals operating predecoder to select bank by external cas or internal cas, controlling options by the precharge interrupt signal, thereby reducing signal lines to bank and preventing unnecessary operations of predecoder and reducing power consumption.


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