The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jan. 25, 2001
Applicant:
Inventor:
Takao Myono, Saitama, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ; G05F 3/02 ;
U.S. Cl.
CPC ...
G05F 1/10 ; G05F 3/02 ;
Abstract
Charge transfer MOS transistors M and M at front two stages are constructed of an N-channel type, and charge transfer MOS transistors at rear two stages are constructed of an P-channel type. Inverting level shift circuits S and S and non-inverting level shift circuits S and S , which can produces an intermediate potential are provided. Because of such a configuration, a charge pump circuit which can realize high efficiency and provide a large output current can be realized. In addition, the gate/source voltage Vgs (transistors are in the ON state) of the charge transfer MOS transistors can be uniformed to 2 Vdd.