The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Feb. 16, 2000
Andrew M. Warwick, Stockport, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
An insulated-gate field-effect semiconductor device, preferably of the SOI type, has source ( ) and drain ( ) regions in a semiconductor body portion ( ) at a first major surface of a semiconductor substrate ( ). The gate-terminal metallisation ( ) is present at an opposite second major surface ( ) of the substrate ( ). A gate connection ( ) is present between the gate electrode ( ) and the substrate ( ) to connect the gate electrode ( ) to the gate-terminal metallisation ( ). This arrangement permits better use of the layout area for source-terminal and drain-terminal metallisations, and their connections, at the upper major surface ( ) of the body portion ( ), without introducing an on-resistance penalty. The part of the gate connection provided by the substrate ( ) does not increase the on-resistance of the main current path through the device, i.e. between the source ( ) and drain ( ). Furthermore, a p-n junction diode can be readily integrated between the channel region ( ) and the gate connection ( ).