The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
May. 20, 1996
Applicant:
Inventor:
Hirohito Watanabe, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ;
Abstract
A nonvolatile semiconductor memory comprises a silicon substrate, a gate electrode formed through a gate insulator film on a principal surface of the semiconductor substrate, a pair of source/drain regions formed in a principal surface region of the semiconductor substrate to locate the gate electrode between the pair of source/drain regions. The gate insulator film is formed of a silicon oxide and/or silicon nitride film in contact with the principal surface of the semiconductor substrate, and a lead germanate film which is formed on the silicon oxide and/or silicon nitride film and which is a ferroelectric having a dielectric constant of not larger than 50.