The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Nov. 27, 2000
Applicant:
Inventors:
Dae Gyu Park, Ichon-Shi, KR;
Tae Ho Cha, Ichon-Shi, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
There is disclosed a method of forming a gate electrode in a semiconductor device. The present invention forms a gate insulating film using (TiO ) (Al O ) in which a titanium oxide film (TiO ) having a high dielectric constant and an aluminum oxide film having leakage and interfacial property are mixed. Therefore, the present invention could not only improve the leakage current characteristic of a semiconductor device but also early develop a high-speed device having a high density in the future.