The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
May. 18, 2000
Applicant:
Inventor:
Hirotaka Yamaguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/184 ;
Abstract
A gate-insulating layer, intrinsic amorphous-silicon semiconductor layer, and ohmic contact layer are continuously formed so as to cover a gate electrode on a substrate to remove a natural oxide film from the surface of the ohmic contact layer by performing radio-frequency sputter etching before forming source and drain electrodes. After the natural oxide film is removed, a metallic layer mainly containing Al is formed on the gate-insulating layer and ohmic contact layer.