The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Nov. 04, 1997
Michio Arai, Tokyo, JP;
Isamu Kobori, Kanagwa, JP;
Other;
Abstract
In a thin film semiconductor device having a substrate ( ), an active layer ( ), a gate insulation layer ( ), and a gate electrode ( ), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane Si H , where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.