The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Jul. 08, 1999
Riki Matsuda, Nagoya, JP;
Shigeru Suzuki, Nagoya, JP;
Brother Kogyo Kabushiki Kaisha, Aichi-ken, JP;
Abstract
A silicon single crystal substrate is formed with a plurality of channels that are partitioned by a plurality of partition walls and that are arranged at a pitch of 40 &mgr;m or less, for example. A filler material is then introduced into the channels to a height that matches the upper edges of the partition walls. After the filler material is hardened by heating a cover film is deposited to a thickness of 5 &mgr;m or less on the upper surface of the filler material and on the upper edges of the partition walls. As a result, the cover film has the same, flat shape as the upper surface of the filler material and the upper edges of the partition walls. Next, the filler material is removed so that the cover film remains covering the channels. Next, electrodes are formed on the cover film. A drive voltage is applied to a desired electrode to deform the cover film at a corresponding area, whereupon pressure is applied to liquid in the corresponding channel, and liquid is ejected from an aperture that is provided at the front end of the subject channel. Thus, the compact and high density liquid ejection device with a large deformation amount and with good drive efficiency can be easily manufactured.