The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Feb. 07, 2001
Hideya Esaki, Toyonaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A sidewall insulating film is formed on the side faces of a buried gate electrode on a substrate. A trench isolation film, self-aligned with the gate electrode, is also formed so that the upper surface of the isolation film is higher than that of the gate electrode. And source/drain contacts, which make electrical contact with source/drain regions, are formed between the sidewall insulating film and isolation film. Since the source/drain contacts and isolation film are both self-aligned with the gate electrode, no mask overlay margin is needed. Thus, the size of the entire active region and that of the source/drain contacts or source/drain regions can be reduced in the gate length direction.