The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2003

Filed:

May. 16, 2001
Applicant:
Inventors:

Zhiliang J. Chen, Plano, TX (US);

Kuok Y. Ling, Plano, TX (US);

Hisashi Shichijo, Plano, TX (US);

Katsuo Komatsuzaki, Niihari-mura, JP;

Chin-Yu Tsai, Plano, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ; H01L 3/106 ;
U.S. Cl.
CPC ...
H01L 3/1072 ; H01L 3/106 ;
Abstract

A light-sensing diode fabricated in a semiconductor substrate having a surface protected by an insulator, comprising a first region of one conductivity type in this substrate, a second region of the opposite conductivity type forming a junction with the first region in the substrate; this junction having a convoluted shape, providing two portions generally parallel to the surface, and a constricted intersection with the surface; and a gate for applying electrical bias across the junction, this gate positioned on the insulator such that it covers all portions of the junction intersection with the surface, thereby creating a gate-controlled photodiode.


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