The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
May. 16, 2001
Akinori Kinugasa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a semiconductor memory having a memory cell structure in which a storage node, which consists of a capacitor electrode film having a rugged surface formed inside holes of an interlayer insulating film that is deposited on a substrate, constitutes a capacitor together with a cell plate through a dielectric film. In a method of forming holes in the interlayer insulating film in the direction of its thickness, forming the capacitor electrode inside the holes and over the upper surface of the interlayer insulating film, removing the capacitor electrode film exposed to the upper surface of the interlayer insulating film, making the surface of the capacitor electrode film formed inside the holes a rugged surface, and forming a cell plate inside the holes and on the upper surface of the interlayer insulating film, the capacitor electrode film exposed to the upper surface of the interlayer insulating film is removed before the surface of the capacitor electrode film formed inside the holes is made to be a rugged surface.