The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Apr. 20, 2001
Applicant:
Inventors:
Kevin Mukai, Santa Clara, CA (US);
Srinivas Nemani, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided. The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture. The first gas mixture comprises tetra-ethyl-ortho-silicate (TEOS), helium (He) and nitrogen (N ). The second gas mixture comprises ozone (O ) and optionally, oxygen (O ).
Quick Actions:
Mukai, Kevin. (2003). Method of forming a silicon oxide layer on a substrate (U.S. Patent No. 6511924). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6511924
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile