The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Aug. 03, 2001
Satoshi Arima, Hyogo, JP;
Yoshikazu Kamitani, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A predetermined reticle is used for sequentially irradiating (giving a shot of) an exposure light onto a negative resist. In the negative resist the region irradiated with the exposure light remains as a resist pattern. The exposure light is not irradiated onto the negative resist in the wafer outer peripheral region. After that, a negative resist pattern is formed by carrying out a development process and, by using this as a mask, etching is carried out on the first conductive layer and, thereby, the first metal wire layer is formed. Since no resist pattern is formed in the wafer outer peripheral region, the first conductive layer does not remain. Thereby, a semiconductor device wherein a conductive layer is prevented from scattering off at the time of the dicing of the wafer can be gained.