The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Dec. 26, 2001
Jong-dae Kim, Taejon, KR;
Sang-gi Kim, Taejon, KR;
Tae-moon Roh, Taejon, KR;
Jin-gun Koo, Taejon, KR;
Dae-woo Lee, Taejon, KR;
Kyoung-ik Cho, Taejon, KR;
Abstract
A method for manufacturing a trench-gate type power semiconductor device is provided. A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type. A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed. The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere. A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask. A source electrode is formed to be electrically connected to the body contact region, and a drain electrode is formed to be electrically connected to the semiconductor substrate.