The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Dec. 07, 2001
Applicant:
Inventor:
Seung Kyu Han, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A capacitor of a semiconductor device and the method of manufacture thereof, includes the steps of providing a semiconductor substrate; forming a lower electrode on the semiconductor substrate; forming a nitride layer on the upper part of the lower electrode; forming an oxide tin layer SnO on the upper part of the nitride layer; forming an amorphous TaON layer on the upper part of the oxide tin layer; diffusing oxygen and tin in the oxide tin layer and amorphous TaON layer by thermal treatment, thereby changing the layers into Ta—C—Sn layer; and forming an upper electrode on the upper part of the Ta—O—Sn layer.