The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventor:
Takayuki Watanabe, Yamanashi, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
An n type InP buried layer with Se or S added in an above 5×10 cm concentration is formed on an active layer mesa stripe having a surface with an SiO film formed on at a peripheral part of the mesa stripe other than the surface with the SiO film formed on. Accordingly, the buried layer can be grown without the over growth.