The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Jun. 18, 2001
Yaohui Zhang, Los Angeles, CA (US);
Bich-Yen Nguyen, Austin, TX (US);
Kuntal Joardar, Chandler, AZ (US);
Daniel Thanh-Khac Pham, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 10 cm . A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/&mgr;m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL<0.063) and the gate delay (CV/I) is reduced to 2.4 ps.