The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Feb. 23, 2000
Abstract
A semiconductor memory device having a capacitor protection layer and a method for manufacturing the same. A capacitor of the semiconductor memory device is entirely covered with an encapsulating layer having a multi-layered structure. The encapsulating layer comprises at least a blocking layer and a capacitor protection layer, each of which is formed of different materials. The blocking is formed of a material capable of preventing a capacitor dielectric layer from volatilizing and/or capable of preventing a reaction between a material layer under the blocking layer and the capacitor protection layer. The capacitor protection layer is formed of a material layer capable of preventing diffusion of hydrogen into the capacitor dielectric layer. In addition, the semiconductor memory device may has a hydrogen barrier layer as another capacitor protection layer, between the capacitor and a passivation layer.