The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2003

Filed:

Mar. 29, 2000
Applicant:
Inventors:

Chun-Hui Tsai, Hinchu, TW;

Lai-Cheng Chen, Hinchu, TW;

Chuo-Chi Peng, Hinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/524 ; H01L 5/100 ;
U.S. Cl.
CPC ...
H01L 3/524 ; H01L 5/100 ;
Abstract

The present invention discloses an organic light-emitting diode (LED). The organic light emitting diode is supported on an indium/tin oxide (ITO) coated glass substrate The organic light-emitting diode includes an amorphous-silicon (&agr;-Si) resistive layer covering the ITO coated glass substrate The organic light-emitting diode further includes a polyaniline (PANI) layer covering the amorphous silicon (&agr;-Si) resistive layer and an organic light emitting layer overlying the PANI layer And, the organic light-emitting diode further has a conductive electrode layer covering the light emitting layer In a preferred embodiment, the amorphous silicon (&agr;-Si) resistive layer functioning as a current limiting layer for limiting a current density conducted between the ITO coated glass substrate and the conductive electrode layer under a maximum allowable current density of 1000 mA/cm . In another preferred embodiment, the amorphous silicon (&agr;-Si) resistive layer functioning as a current distribution layer for distributing a current conducted between the ITO coated glass substrate and the conductive electrode layer. Thus, the difference between a greatest current density from a smallest current density is under a maximum allowable current density difference of 1000 mA/cm . In summary, this invention discloses an organic light-emitting diode (LED) that includes an inorganic layer functioning as a current limiting layer.


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