The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Mar. 30, 2001
Ruediger Held, Minneapolis, MN (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A method is provided for processing a semiconductor topography. In particular a method is provided in which a greater pressure may be applied to a first portion of a semiconductor topography than in a second portion of the topography. As such, a method is provided in which a portion of an upper layer in a region adjacent to an outer edge of the semiconductor topography is polished at a faster rate than a portion of the upper layer in a region comprising the center of the topography. Consequently, the method may subsequently provide a manner in which a substantially planar upper surface may be formed across a semiconductor topography including a region adjacent to an outer edge of the semiconductor topography. Alternatively, regions of an upper layer of a semiconductor topography polished at a faster rate than other regions may occur at various locations across the topography.