The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Oct. 14, 1997
Konstantinos Evangelos Spartiotis, Athens, GR;
Miltiadis Evangelos Sarakinos, Geneva, CH;
Tom Gunnar Schulman, Masala, FI;
Simage, Oy, Espoo, FI;
Abstract
In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.