The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Feb. 28, 2001
Applicant:
Inventors:
Chin Kyo Kim, Seoul, KR;
Tae Kyung Yoo, Kyonggi-do, KR;
Assignee:
LG Electronics Inc., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 2/516 ;
U.S. Cl.
CPC ...
C30B 2/516 ;
Abstract
GaN system compound semiconductor and method for growing a crystal thereof, which can significantly reduce a concentration of crystalline defects caused by lattice mismatch by growing a GaN system compound semiconductor of GaN or In Ga N by using In Al N crystal on a substrate as an intermediate buffer layer, the method including the steps of (1) providing a sapphire substrate, (2) growing an intermediate buffer layer of In Al N on the sapphire substrate, and (3) growing GaN or In Ga N system compound semiconductor on the intermediate buffer layer.