The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2003
Filed:
Dec. 18, 2000
Applicant:
Inventors:
Jeong-Hyun Oh, Daegu-kwangyokshi, KR;
Mi-Kyung Lee, Ansan-shi, KR;
Assignee:
Samsung Electronics Co. LTD, Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 8/00 ;
U.S. Cl.
CPC ...
C03B 8/00 ;
Abstract
Disclosed is a method for fabricating high-purity silica glass using a sol-gel processing that includes the steps of: (a) mixing deionized water with a monomer and a dimer to prepare an aqueous premix solution; (b) mixing the aqueous premix solution with a fused silica and a dispersion agent; (c) mixing the resulting mixture to form a dispersed sol; (d) aging the dispersed sol at the ambient temperature to stabilize silica particles, and removing air voids from the sol; and, (e) adding a polymerization initiator and a gelation agent to the aged sol.