The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Aug. 17, 2001
Youichi Ohtsuka, Chiba, JP;
Junichi Sone, Tokyo, JP;
Jaw-Shen Tsai, Tokyo, JP;
Takanari Yasui, Ibaraki, JP;
Yasunobu Nakamura, Tokyo, JP;
Other;
Abstract
High device reliability, a reduction in power consumption, and a high operation speed are achieved. When a predetermined bias voltage is applied between a source and a drain to change a gate voltage, a current discretely flows between the source and the drain in accordance with quantized electrostatic energy levels in an island electrode . The switching ON/OFF of the current between the source and the drain in this case is enabled by applying ½-electron charge to a gate. When the gate voltage induces polarization in a ferroelectric layer , its electric field is applied to the island electrode . The current between the source and the drain in this case can be measured with high sensitivity. Charge holding is carried out by the polarization in the ferroelectric layer , and stored data can be held even if power supply is cut off.