The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Jun. 08, 2001
Applicant:
Inventors:
Takashi Kumagai, Suwa, JP;
Masahiro Takeuchi, Suwa, JP;
Satoru Kodaira, Suwa, JP;
Takafumi Noda, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/711 ;
U.S. Cl.
CPC ...
H01L 2/711 ;
Abstract
The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain-drain connection layers in a second layer, and drain-gate connection layers in a third layer define connection wirings of a flip-flop. A p type well contact region is provided for every two of the memory cells arranged in the Y-axis direction.