The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Mar. 20, 2001
Tatsuo Yoneda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A power semiconductor device of the present invention comprises a voltage drive type power MOS transistor, a series connection of a first resistor and Zener diode, a second resistor, and a series connection of a third resistor and MOS transistor. The power MOS transistor has a gate, source and drain. A drain-to-source voltage of the power MOS transistor is applied across the series connection of the first resistor and Zener diode. A gate-to-source voltage of the power MOS transistor is applied across the second resistor. The gate-to-source voltage of the power MOS transistor is applied across a series connection of a third resistor and the MOS transistor. The MOS transistor has a gate, source and drain. The gate of the MOS transistor is connected to a node between the first resistor and the Zener diode.