The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Jun. 13, 2001
Hisao Nagata, Osaka, JP;
Nippon Sheet Glass Co., Ltd., Osaka, JP;
Abstract
A semiconductor light-receiving element fabricated by using an impurity diffusion, in which a slow tail phenomenon caused in the processing of a digital signal may be suppressed. The semiconductor light-receiving element comprises a substrate including a first impurity diffused region, a first electrode provided on the bottom of the substrate, a second electrode provided on the first impurity diffused region, a second impurity diffused region provided so as to surround the first impurity diffused region with leaving a certain space therebetween, and a third electrode provided on the second impurity diffused region, wherein a reverse vias is applied to a PN junction formed by the substrate and the second impurity diffused region.