The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Nov. 25, 1996
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A semiconductor device ( ) is formed that is bi-lateral and has a voltage blocking capability that is well suited to applications involving portable electronics. The semiconductor device has an epitaxial layer ( ) that is formed on a semiconductor substrate ( ). A doped region ( ) is formed that extends from a top surface ( ) of the epitaxial layer ( ) to the underlying semiconductor substrate ( ). The semiconductor device ( ) has a source region ( ) that is separated from the doped region ( ) to provide a channel region ( ). The channel region ( ) is modulated by a gate structure ( ) to determine if a current flow should be allowed through semiconductor device ( ) or if semiconductor device ( ) is to provide voltage blocking capability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile