The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Oct. 17, 2000
Applicant:
Inventors:
Jefferson W. Hall, Phoenix, AZ (US);
Mohamed Imam, Tempe, AZ (US);
Zia Hossain, Tempe, AZ (US);
Mohammed Tanvir Quddus, Tempe, AZ (US);
Joe Fulton, Chandler, AZ (US);
Assignee:
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
A compact metal oxide semiconductor (MOS) device has its channel region formed by the lateral extension of two high voltage (HV) regions. The two HV regions are implanted into a well region and, as a result of an annealing process, undergo outdiffusion and merge together into a single channel region. The resulting channel region has a dopant concentration that is less than the dopant concentrations of the individual HV regions. The compact MOS device exhibits a low threshold voltage characteristic.