The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Mar. 29, 1999
Ronald G. Musket, Danville, CA (US);
Robert G. Patterson, Dublin, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10 ions/cm to be extended to below 10 ions/cm . The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm and >750 cm , and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.