The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Oct. 18, 2000
Applicant:
Inventors:
Allen S. Yu, Fremont, CA (US);
Paul J. Steffan, Elk Grove, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
Abstract
Methods of manufacturing semiconductor devices having low resistance reduced channel length transistors. Spacers are formed on each side of trenches that define the location of transistor channels. The spacers are formed with a dimension between the spacers that is less than a dimension available from photolithography systems currently available. A layer of gate oxide and a polysilicon gate are formed within the dimension resulting in transistors having channels length less than that available from standard photolithographic methods of forming gates and channels.