The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Feb. 11, 2002
Applicant:
Inventors:
Jen-Te Chen, Hsinchu, TW;
Kou-Liang Jaw, Hsinchu, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract
The present invention is directed to an effective and relatively inexpensive way to measuring the depth of a well in a semiconductor device. In accordance with an aspect of the present invention, a method for measuring the depth of a well of a substrate comprises providing a substrate having a well therein and a cut through a depth of the well. The substrate is exposed to an etchant to reveal a discontinuity in a boundary at the depth of the well. The depth of the well is measured at the boundary by scanning electron microscopy (SEM) or other suitable techniques.