The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Mar. 22, 2000
Zdravko Ivanov, Gothenburg, SE;
Tord Claeson, Mölndal, SE;
Radoslov Chakalov, Gothenburg, SE;
Erland Wikborg, Danderyd, SE;
Telefonaktiebolaget LM Ericsson (publ), Stockholm, SE;
Abstract
A magnetoresistive element, comprising a crystal structure with a grain boundary formed at a misorientation angle, and a method of producing a crystal structure having colossal magnetoresistance, wherein a grain boundary is formed at a misorientation angle. The crystal structure comprises a substrate layer and a CMR film layer epitaxially grown thereon, the CMR film layer having a plurality of first sections and a plurality of second sections with intermediate grain boundaries, the crystallographic axis of the first sections being different from the crystallographic axis of the second sections. The method comprises forming, on a base crystal material, a template comprising a first set of sections and a second set of sections with intermediate boundaries, the crystallographic axis of the first set being different from the crystallographic axis of the second set, and growing a film epitaxially on the base crystal material to form a plurality of grain boundaries over the boundaries between the first set and the second set.