The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Feb. 07, 2001
Cornelius Constantine, Morgan Hill, CA (US);
Richard G. Barber, Morgan Hill, CA (US);
Anritsu Company, Morgan Hills, CA (US);
Abstract
A phase compensated switched attenuation device is provided for attenuating high frequency signals while maintaining an insertion loss of less than 1 dB up to 3 GHz. A single GaAs FET is coupled between input port and output port in parallel with a 20 dB pad for switching the device between a through state and an attenuation state. First and second isolation FETs and are coupled between the GaAs FET and pad terminals and to isolate the GaAs FET , decrease return loss when the GaAs FET is on, and increase isolation of the GaAs FET from the pad when the GaAs FET is on. A resistor or a series combination of a resistor and capacitor can be coupled to the pad terminals and in parallel with the pad to improve return loss when the GaAs FET is on. Resistors , and are also provided to reduce distortion, coupling gates of the FETs , and to a plurality of voltage references V and V