The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6504377 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 07, 2003

Filed:

Feb. 27, 2001
Applicant:
Inventor:

Thomas Heiser, Strasbourg, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/762 ;
U.S. Cl.
CPC ...
G01N 2/762 ;
Abstract

An analyzing device for producing measurements using transient ionic drift technique and an analysis method using same. The device for the quantitative detection of copper in silicon by transient ionic drift essentially comprises a heater and a rapid cooler for the sample to be analyzed, an electrode for measuring the electrical capacity of the sample and a unit generating an energizing signal and processing the measuring electric signal. The heater ( ) for the sample ( ) to be analyzed consists in at least a halogen lamp, the rapid cooler ( ) for the sample ( ) to be analyzed is a water cooler, and the electrode for measuring the sample ( ) to be analyzed is a mercury electrode.


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Heiser, Thomas. (2003). Device for quantitative detection of copper in silicon by transient ionic drift and method using same (U.S. Patent No. 6504377). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6504377

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